moc211m, moc212m, MOC213M ?small ouline optocouplers transistor output ?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 apr il 2013 moc211m, moc212m, MOC213M small ouline optocouplers transistor output features ul recognized (file #e90700, volume 2) vde recognized (file #136616) (add option ??for vde approval, e.g., moc211vm) convenient plastic soic-8 surface mountable package style standard soic-8 footprint, with 0.050" lead spacing high input-output isolation of 2500 v ac(rms) guaranteed minimum bv ceo of 30v guaranteed applications general purpose switching circuits interfacing and coupling systems of different potentials and impedances regulation feedback circuits monitor and detection circuits description these devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. they are ideally suited for high density applications, and eliminate the need for through- the-board mounting. sc hematic p ac ka g e outline base n/c anode ca thode 1 2 3 4 5 6 7 8 emitter collect or n/c n/c figure 1. sc hematic figure 2. p ac ka g e outline http://
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 2 moc211m, moc212m, MOC213M ?small ouline optocouplers transistor output absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. t a = 25? unless otherwise speci?d. notes: 1. isolation surge voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. 3. v iso rating of 2500 v ac(rms) for t = 1 minute is equivalent to a rating of 3,000 v ac(rms) for t = 1 second. symbol rating value unit emitter i f forward current ?continuous 60 ma i f (pk) forward current ?peak (pw = 100 ?, 120 pps) 1.0 a v r reverse voltage 6.0 v p d led power dissipation @ t a = 25? derate above 25? 90 0.8 mw mw/? detector v ceo collector-emitter voltage 30 v v eco emitter-collector voltage 7.0 v v cbo collector-base voltage 70 v i c collector current-continuous 150 ma p d detector power dissipation @ t a = 25? derate above 25? 150 1.76 mw mw/? total device v iso input-output isolation voltage (f = 60 hz, t = 1 minute) (1)(2)(3) 2500 vac(rms) p d total device power dissipation @ t a = 25? derate above 25? 250 2.94 mw mw/? t a ambient operating temperature range -40 to +100 ? t stg storage temperature range -40 to +150 ? t l lead soldering temperature (1/16 " from case, 10 second duration) 260 ?
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 3 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output electrical characteristics t a = 25? unless otherwise speci?d. *typical values at t a = 25? notes: 1. isolation surge voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1 and 2 are common and pins 5, 6 and 7 are common. 3. v iso rating of 2500 v ac(rms) for t = 1 minute is equivalent to a rating of 3,000 v ac(rms) for t = 1 second. 4. current transfer ratio (ctr) = i c / i f x 100 %. symbol p arameter t est conditions min. t yp.* max. unit emitter v f input f orw ard v oltage i f = 10 ma 1.15 1.5 v i r re v erse leakage current v r = 6.0 v 0.001 100 ? c in input capacitance 18 pf detector i ceo1 i ceo2 collector-emitter dar k current v ce = 10 v , t a = 25? v ce = 10 v , t a = 100? 1.0 1.0 50 na ? bv ceo collector-emitter breakdo wn v oltage i c = 100 ? 30 100 v bv eco emitter-collector breakdo wn v oltage i e = 100 ? 7.0 10 v c ce collector-emitter capacitance f = 1.0 mhz, v ce = 0 7.0 pf coupled ctr collector-output current (4) moc211m moc212m MOC213M i f = 10 ma, v ce = 10 v 20 50 100 % v iso isolation surge v oltage (1)(2)(3) f = 60 hz a c p eak, t = 1 minute 2500 v ac(r ms) r iso isolation resistance (2) v = 500 v 10 11 v ce (sat) collector-emitter satur ation v oltage i c = 2.0 ma, i f = 10 ma 0.4 v c iso isolation capacitance (2) v = 0 v , f = 1 mhz 0.2 pf t on t ur n-on time i c = 2.0 ma, v cc = 10 v , r l = 100 (fig. 12) 7.5 ? t off t ur n-off time i c = 2.0 ma, v cc = 10 v , r l = 100 (fig. 12) 5.7 ? t r rise time i c = 2.0 ma, v cc = 10 v , r l = 100 (fig. 12) 3.2 ? t f f all time i c = 2.0 ma, v cc = 10 v , r l = 100 (fig. 12) 4.7 ?
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 4 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output typical performance curves figure 4. output curent vs. input current i f led input current (ma) 0. 1 1 10 100 i c output collector current (normalized) 0.01 0. 1 1 10 v ce = 5 v no r m a l i z e d t o i f = 1 0 m a figure 5. output current vs. ambient temperature t a ambient temperature ( c) -8 0 -6 0 -4 0 - 2 0 0 2 0 4 0 6 0 8 0 10 0 12 0 i c output collector current (normalized) 0.1 1 10 no rm a l i z e d t o t a = 2 5 c figure 6. output current vs. collector-emitter voltage v ce co l l ecto r - em i t ter v o l t ag e ( v) 012345678 9 10 i c output collector current (normalized) 0.0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 i f = 1 0 m a no r m a l i z e d t o v ce = 5 v figure 7. dark current vs. ambient temperature figure 8. ctr vs. r be (unsaturated) t a am b i e n t tem p er a t u r e ( c) 0 204 06 08 0 1 0 0 i ce o collector -emitter dark current (na) 0.1 1 10 10 0 10 00 10 0 0 0 v ce = 10 v i f ?led for w ard current (ma) v f ?for w ard v ol t a ge (v) figure 3. led forward voltage vs. forward current 1 1 0 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = ?5 c t a = 25 c t a = 100 c r be base re sista nce ( k ) 10 100 1000 normalized ctr 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0. 9 1.0 i f ma i f = i f = 20 10 ma = 5 m a v ce = 5 v , t a = 25 c norm aliz ed to: ct r at r be = op en
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 5 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output typical performance curves (continued) figure 12. switc hing time t est cir cuit and w a vef orms norm figure 10. normalized t on vs. r be figure 11. normalized t off vs. r be figure 9. ctr vs. r be (saturated) r be r be b ase re sista nce ( k ) 10 100 100 0 norm al ized ct r 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0. 9 1.0 i f = 20 m a i f = 10 m a i f = 5 m a v ce = 0. 3 v , t a = 25 c norm aliz ed to: ct r at r be = op en b ase re sista nce ( m ) (m ) 0.01 0.1 1 10 100 alized t on 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v cc = 10 v i c = 2 m a r l = 10 0 normalized to: t on at r be = open r be b ase re sista nce 0.01 0.1 1 10 100 norm alized t of ff 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v cc = 10 v i c = 2 m a r l = 10 0 normalized to : t of ff at r be = open output pulse input pulse test circuit t r t f input i f r l r be v cc = 10 v output t on 10% 9 0% t off i c adjust i f to produce i c = 2 ma waveforms
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 6 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output package dimensions 8-pin soic surface mount recommended p ad la y out p ac kage dr a wings are pro vided as a ser vice to customers consider ing f airchild components . dr a wings ma y change in an y manner without notice . please note the re vision and/or date on the dr a wing and contact a f airchild semiconductor representativ e to v er ify or obtain the most recent re vision. p ac kage speci?ations do not e xpand the ter ms of f airchild s w or ldwide ter ms and conditions , speci?ally the w arr anty therein, which co v ers f airchild products . alw a ys visit f airchild semiconductor s online pac kaging area f or the most recent pac kage dr a wings: http://www .f airchildsemi.com/pac kaging/ lead coplanarity: 0.004 (0.10) max 0.202 (5.13) 0.182 (4.63) 0.021 (0.53) 0.011 (0.28) 0.050 (1.27) typ. 0.164 (4.16) 1 8 0.144 (3.66) 0.244 (6.1 9 ) 0.224 (5.6 9 ) 0.143 (3.63) 0.123 (3.13) 0.008 (0.20) 0.003 (0.08) 0.010 (0.25) 0.006 (0.16) seating p lane 0.024 (0.61) 0.050 (1.27) dimensions in inches (mm). 0.155 (3. 9 4) 0.275 (6. 99 ) 0.060 (1.52)
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 7 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output ordering information marking information option or der entr y identi?r description v v vde 0884 r2 r2 t ape and reel (2500 units per reel) r2v r2v vde 0884, t ape and reel (2500 units per reel) 1 2 6 4 3 5 de?itions 1 f airchild logo 2 de vice n umber 3 vde mar k (note: only appears on par ts ordered with vde option ?see order entr y tab le) 4 one digit y ear code , e .g., ? 5 t w o digit w or k w eek r anging from ?1 to ?3 6 assemb ly pac kage code 211 s yy x v
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 8 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output carrier tape specifications 4.0 0.10 1.5 min user direction of feed 2.0 0.05 1.75 0.10 5.5 0.05 12.0 0.3 8.0 0.10 0.30 max 8.3 0.10 3.50 0.20 dimensions in mm 0.1 max 6.40 0.20 5.20 0.20 1.5 0.1
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 9 moc211m, moc212m, MOC213M ?small ouline optocoupler s t ransistor output re? w pr o?e pr o?e freature pb-free assemb l y pr o?e t emper ature minim um (tsmin) 150? t emper ature maxim um (tsmax) 200? time (t s ) from (tsmin to tsmax) 60?20 seconds ramp-up rate (t l to t p ) 3?/second maxim um liquidous t emper ature (t l ) 217? time (t l ) maintained abo v e (t l ) 60?50 seconds p eak body p ac kage t emper ature 260? +0? / ?? time (t p ) within 5? of 260? 30 seconds ramp-do wn rate (t p to t l ) 6?/second maxim um time 25? to p eak t emper ature 8 min utes maxim um time (seconds) te mperature ( c) t ime 25? to peak 260 240 220 200 180 160 140 120 100 80 60 40 20 0 t l t s t l t p t p ts m a x ts m i n 120 preheat area max. ramp-up rate = 3?/s max. ramp-down rate = 6?/s 240 360
?005 fairchild semiconductor corporation www.fairchildsemi.com moc211m, moc212m, MOC213M rev. 1.0.2 10 moc211m, moc212m, MOC213M ?small ouline optocouplers transistor output
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